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this is information on a product in full production. october 2014 docid026223 rev 2 1/18 18 stgw25m120df3 STGWA25M120DF3 trench gate field-stop igbt, m series 1200 v, 25 a low loss datasheet - production data figure 1.internal schematic diagram features ? 10 s of short-circuit withstand time ? v ce(sat) = 1.85 v (typ.) @ i c = 25 a ? tight parameters distribution ? safer paralleling ? low thermal resistance ? soft and fast recovery antiparallel diode applications ? industrial drives ? ups ? solar ? welding description this device is an igbt developed using an advanced proprietary trench gate field-stop structure. the device is part of the m series of igbts, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. furthermore, a positive v ce(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. 72 72orqjohdgv &ru7$% * ( table 1. device summary order code marking package packaging stgw25m120df3 g25m120df3 to-247 tube STGWA25M120DF3 g25m120df3 to-247 long leads tube www.st.com
contents stgw25m120df3, STGWA25M120DF3 2/18 docid026223 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.1 to-247, stgw25m120df3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 to-247 long leads, STGWA25M120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid026223 rev 2 3/18 stgw25m120df3, STGWA25M120DF3 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 1200 v i c continuous collector current at t c = 25 c 50 a i c continuous collector current at t c = 100 c 25 a i cp (1) 1. pulse width limited by ma ximum junction temperature. pulsed collector current 100 a v ge gate-emitter voltage 20 v i f continuous forward current at t c = 25 c 50 a i f continuous forward current at t c = 100 c 25 a i fp (1) pulsed forward current 100 a p tot total dissipation at t c = 25 c 375 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.4 c/w r thjc thermal resistance junction-case diode 0.96 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics stgw25m120df3, STGWA25M120DF3 4/18 docid026223 rev 2 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 1200 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 25 a 1.85 2.3 v v ge = 15 v, i c = 25 a, t j = 125 c 2.1 v ge = 15 v, i c = 25 a t j = 175 c 2.2 v f forward on-voltage i f = 25 a 2.95 4.1 v i f = 25 a t j = 125 c 2.25 v i f = 25 a t j = 175 c 1.9 v v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 1200 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -1550- pf c oes output capacitance - 180 - pf c res reverse transfer capacitance -65-pf q g total gate charge v cc = 960 v, i c =25 a, v ge = 15 v, see figure 30 -85-nc q ge gate-emitter charge - 11.5 - nc q gc gate-collector charge - 45.5 - nc
docid026223 rev 2 5/18 stgw25m120df3, STGWA25M120DF3 electrical characteristics table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 600 v, i c = 25 a, v ge = 15 v , r g = 15 ? see figure 29 -28-ns t r current rise time - 15 - ns (di/dt) on turn-on current slope - 1370 - a/s t d(off) turn-off delay time - 150 - ns t f current fall time - 155 - ns e on (1) 1. energy losses include reverse recovery of the diode. turn-on switching losses - 0.85 - mj e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 1.3 - mj e ts total switching losses - 2.15 - mj t d(on) turn-on delay time v ce = 600 v, i c = 25 a, r g = 15 ? , v ge = 15 v , t j = 175 c, see figure 29 -28-ns t r current rise time - 17 - ns (di/dt) on turn-on current slope - 1270 - a/s t d(off) turn-off delay time - 155 - ns t f current fall time - 240 - ns e on (1) turn-on switching losses - 1.6 - mj e off (2) turn-off switching losses - 1.9 - mj e ts total switching losses - 3.5 - mj t sc short-circuit withstand time v cc 600v, v ge = 15v, t jstart 150c 10 - s table 7. diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 25 a, v r = 600 v, v ge = 15 v, see figure 29 di/dt = 1000 a/s - 265 - ns q rr reverse recovery charge - 1.2 - c i rrm reverse recovery current - 19 - a di rr/ /dt peak rate of fall of reverse recovery current during t b -1090-a/s e rr reverse recovery energy - 0.22 - mj t rr reverse recovery time i f = 25 a, v r = 600 v, v ge = 15 v, t j = 175 c, see figure 29 di/dt = 1000 a/s - 585 - ns q rr reverse recovery charge - 5 - c i rrm reverse recovery current - 30 - a di rr/ /dt peak rate of fall of reverse recovery current during t b - 270 - a/s e rr reverse recovery energy - 0.75 - mj
electrical characteristics stgw25m120df3, STGWA25M120DF3 6/18 docid026223 rev 2 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature figure 3. collector current vs. case temperature figure 4. output characteristics (t j =25c) figure 5. output characteristics (t j =175c) figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current 3 wrw : 7 & ?& 9 *( ?97 - ??& *,3')65 , & $ 7 & ?& 9 *( ?97 - ??& *,3')65 , & $ 9 &( 9 9 9 9 9 *( 9 9 *,3')65 , & $ 9 &( 9 9 9 9 9 *( 9 9 *,3')65 9 &(vdw 9 7 & ?& 9 *( 9 , & $ , & $ , & $ *,3')65 , & $ 9 *( 9 7 m ?& 7 m ?& 7 m ?& 9 &(vdw 9 *,3')65
docid026223 rev 2 7/18 stgw25m120df3, STGWA25M120DF3 electrical characteristics figure 8. collector current vs. switching frequency figure 9. safe operating area figure 10. transfer characteristics figure 11. diode v f vs forward current figure 12. normalized v ge(th) vs junction temperature figure 13. normalized v (br)ces vs. junction temperature , & $ in+] 7 & ?& 7 & ?& 5hfwdqjxodufxuuhqwvkdsh gxw\f\foh 9ff 95j 9jh 9 7m ? & *,3')65 , & $ 9 &( 9 ?v ?v pv 6lqjohsxovh7f ?& 7m?&9 *( 9 ?v *,3')65 , & $ 9 *( 9 7m ?& 7m ?& 9 &( 9 *,3')65 , & $ 7 m ?& 7 m ?& 7 m ?& 9 ) 9 *,3')65 9 *(wk qrup 7 & ?& 9 &( 9 *( , & p$ *,3')65 9 %5&(6 qrup 7 & ?& , & p$ *,3')65
electrical characteristics stgw25m120df3, STGWA25M120DF3 8/18 docid026223 rev 2 figure 14. capacitance variations figure 15. gate charge vs. gate-emitter voltage figure 16. switching losses vs. collector current figure 17. switching losses vs. gate resistance figure 18. switching losses vs. junction temperature figure 19. switching losses vs. collector emitter voltage &s) 9 &( 9 &lhv &rhv &uhv i 0+] *,3')65 9 *( 9 4 j q& 9 && 9 , & $ , * p$ *,3')65 (p- , & $ 9 && 9 9 *( 9 5j 7m ?& (rq (rii *,3')65 (p- 5 j 9 && 9 9 *( 9 , & $ 7m ?& (rq (rii *,3')65 (p- 7 - ?& 9 && 9 9 *( 9 , & $ 5j (rq (rii *,3')65 (p- 9 &( 9 9 *( 9 7m ?& , & $ 5j (rq (rii *,3')65
docid026223 rev 2 9/18 stgw25m120df3, STGWA25M120DF3 electrical characteristics figure 20. short-circuit time and current vs. v ge figure 21. switching times vs. collector current figure 22. switching times vs. gate resistance figure 23.reverse recovery current vs. diode current slope figure 24. reverse recovery time vs. diode current slope figure 25.reverse recovery charge vs. diode current slope w vf ?v 9 *( 9 9 && ?9 7 - ??& ,vf wvf , vf $ *,3')65 wqv , & $ 9 && 9 7m ?& 9 *( 9 5j w grii w grq w i w u *,3')65 wqv 5 j 9 && 9 7m ?& 9 *( 9 , & $ w grii w grq w u w i *,3')65 , uup $ glgw$?v 9 && 9 7m ?& 9 *( 9 , ) $ *,3')65 w uu qv glgw$?v 9 && 9 7m ?& 9 *( 9 , ) $ *,3')65 4 uu ?& glgw$?v 9 && 9 7m ?& 9 *( 9 , ) $ *,3')65
electrical characteristics stgw25m120df3, STGWA25M120DF3 10/18 docid026223 rev 2 figure 26. reverse recovery energy vs. diode current slope ( uu p- glgw$?v 9 && 9 7m ?& 9 *( 9 , ) $ *,3')65
docid026223 rev 2 11/18 stgw25m120df3, STGWA25M120DF3 electrical characteristics figure 27.thermal impedance for igbt figure 28.thermal impedance for diode zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2
test circuits stgw25m120df3, STGWA25M120DF3 12/18 docid026223 rev 2 3 test circuits figure 29. test circuit for inductive load switching figure 30. gate charge test figure 31. switching waveform figure 32. diode reverse recovery waveform am01504v1 am01505v1 k k k k k k am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t s t f q rr i rrm t v rrm dv/dt 10%
docid026223 rev 2 13/18 stgw25m120df3, STGWA25M120DF3 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. 4.1 to-247, stgw25m120df3 figure 33. to-247 drawing 0075325_h
package mechanical data stgw25m120df3, STGWA25M120DF3 14/18 docid026223 rev 2 table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid026223 rev 2 15/18 stgw25m120df3, STGWA25M120DF3 package mechanical data 4.2 to-247 long leads, STGWA25M120DF3 figure 34. to-247 long leads drawing 8463846_a_f
package mechanical data stgw25m120df3, STGWA25M120DF3 16/18 docid026223 rev 2 table 9. to-247 long leads mechanical data dim. mm min. typ. max. a4.905.005.10 a1 2.31 2.41 2.51 a2 1.90 2.00 2.10 b1.16 1.26 b2 3.25 b3 2.25 c0.59 0.66 d 20.90 21.00 21.10 e 15.70 15.80 15.90 e2 4.90 5.00 5.10 e3 2.40 2.50 2.60 e5.345.445.54 l 19.80 19.92 20.10 l1 4.30 p3.503.603.70 q5.60 6.00 s6.056.156.25
docid026223 rev 2 17/18 stgw25m120df3, STGWA25M120DF3 revision history 5 revision history table 10. document revision history date revision changes 22-apr-2014 1 initial release. 31-oct-2014 2 document status promoted from preliminary to production data. updated all the document accordingly. added section 2.1: electrical characteristics (curves) . updated section 4: package mechanical data .
stgw25m120df3, STGWA25M120DF3 18/18 docid026223 rev 2 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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